SI4532CDY-T1-GE3 - 30V 5.2/3.4A 2.7W Rds=65/140mOhm SMD SO8 dupla N-MOSFET/P-MOSFET - VISHAY

0.5244 €+ VAT
0.666 € incl. VAT

SI4532CDY-T1-GE3 - 30V 5.2/3.4A 2.7W Rds=65/140mOhm SMD SO8 dupla N-MOSFET/P-MOSFET - VISHAY

Name: SI4532CDY-T1-GE3 - 30V 5.2/3.4A 2.7W Rds=65/140mOhm SMD SO8 dupla N-MOSFET/P-MOSFET - VISHAY
Brand: VISHAY
SKU: 63-01-25
Price: 0.666 EUR
Availability: InStock

The picture is for illustration purposes only. Please read the product description!

In stock 1338 pcs

0.5244 €+ VAT
0.666 € incl. VAT

MOSFET, 30 V Dual 5.2/3.4 A 2.7W Rds=65/140mOhm SMD SO8

Manufacturer code:

SI4532CDY-T1-GE3

Manufacturer:

VISHAY

Datasheet:

si4532cd.pdf

Group:

MOSFETs

Component Family:

MOSFET, N-MOS, P-MOS

Case Style:

Surface Mount (SMD)

Case:

SO8

Termination Type:

Surface mount (SMD)

Number of Pins:

Power Dissipation Ptot [W], Max:

1.14 W

Manufacturer Code:

SI4532CDY-T1-E3

Drain Current Id [A] @ 25°C:

5.2 A/-3.4 A

On Resistance Rds[Ohm] @ Ids [A]:

0.065 Ohm/0.14 Ohm @ 5.2/-3.4 A

Threshold Voltage Ugs[V]:

4.5 V/-4.5 V

Rise Time ton [nsec.]:

11 ns/10 ns

Fall time toff [nsec.]:

25/30 ns

Gate Capacitance Ciss [pF]:

305/340 pF

Drain-Source Voltage Uds [V]:

30 V/-30 V

Operating Temperature Min. [°C]:

-55 °C

Operating Temperature Max. [°C]:

+150 °C

ROHS:

Yes

pcs

Quantity discount:

Quantity [pcs]

Net [EUR]

Gross [EUR]

100

0,35 €

0,44 €

Our Warehouse

1338 pcs

Available for immediate delivery

Info

Weight:

0.187 g/pcs