SI2308BDS-T1-GE3 - 60V 2.3A 1.66W Rds=0.16Ohm SMD SOT-23 N-MOSFET - VISHAY

0.7128 €+ VAT
0.9053 € incl. VAT

SI2308BDS-T1-GE3 - 60V 2.3A 1.66W Rds=0.16Ohm SMD SOT-23 N-MOSFET - VISHAY

Name: SI2308BDS-T1-GE3 - 60V 2.3A 1.66W Rds=0.16Ohm SMD SOT-23 N-MOSFET - VISHAY
Brand: VISHAY (SILICONIX)
SKU: 63-01-08
Price: 0.9053 EUR
Availability: InStock

The picture is for illustration purposes only. Please read the product description!

In stock 7632 pcs

0.7128 €+ VAT
0.9053 € incl. VAT

MOSFET, 60 V 2.3 A 1.66 W Rds=0.16Ohm SMD SOT-23

Manufacturer code:

SI2308BDS-T1-GE3

Manufacturer:

VISHAY (SILICONIX)

Datasheet:

si2308bd.pdf

Group:

MOSFETs

Component Family:

MOSFET, N-MOS

Case Style:

Surface Mount (SMD)

Case:

SOT-23

Termination Type:

Surface mount (SMD)

Number of Pins:

Case Style (JEDEC):

MS-012

Power Dissipation Ptot [W], Max:

1.66 W

Manufacturer Code:

Drain Current Id [A] @ 25°C:

2.3 A

On Resistance Rds[Ohm] @ Ids [A]:

0.192 Ohm @ 1.7 A

Threshold Voltage Ugs[V]:

3 V

Rise Time ton [nsec.]:

6 ns

Fall time toff [nsec.]:

15 ns

Gate Capacitance Ciss [pF]:

190 pF

Drain-Source Voltage Uds [V]:

60 V

Operating Temperature Min. [°C]:

-55 °C

Operating Temperature Max. [°C]:

+150 °C

ROHS:

Yes

pcs

Our Warehouse

7632 pcs

Available for immediate delivery

Info

Additional Datasheet:

Siliconix_ROHS_marking.pdf

Weight:

0.008 g/pcs