SI4431CDY-T1-GE3 - 30V 5.6A 1.6W Rdson=0.032Ohm SMD SO8 P-MOSFET - VISHAY

0.415 €+ VAT
0.527 € incl. VAT

SI4431CDY-T1-GE3 - 30V 5.6A 1.6W Rdson=0.032Ohm SMD SO8 P-MOSFET - VISHAY

Name: SI4431CDY-T1-GE3 - 30V 5.6A 1.6W Rdson=0.032Ohm SMD SO8 P-MOSFET - VISHAY
Brand: VISHAY (SILICONIX)
SKU: 63-01-03
Price: 0.527 EUR
Availability: InStock

The picture is for illustration purposes only. Please read the product description!

In stock 2286 pcs

0.415 €+ VAT
0.527 € incl. VAT

MOSFET, 30 V 5.6 A 1.6 W Rdson=0.032Ohm SMD SO8

Manufacturer code:

SI4431CDY-T1-GE3

Manufacturer:

VISHAY (SILICONIX)

Datasheet:

si4431cd.pdf

Group:

MOSFETs

Component Family:

MOSFET, P-MOS

Case Style:

Surface Mount (SMD)

Case:

SO8

Termination Type:

Surface mount (SMD)

Number of Pins:

Case Style (JEDEC):

MS-012

Power Dissipation Ptot [W], Max:

1.6 W

Manufacturer Code:

SI4431CDY-T1-GE3

Drain Current Id [A] @ 25°C:

-5.6 A

On Resistance Rds[Ohm] @ Ids [A]:

0.032 Ohm @ -7 A

Threshold Voltage Ugs[V]:

-2.5 V

Rise Time ton [nsec.]:

10 ns

Fall time toff [nsec.]:

23 ns

Gate Capacitance Ciss [pF]:

1006 pF

Drain-Source Voltage Uds [V]:

-30 V

Operating Temperature Min. [°C]:

-55 °C

Operating Temperature Max. [°C]:

+150 °C

ROHS:

Yes

pcs

Quantity discount:

Quantity [pcs]

Net [EUR]

Gross [EUR]

100

0,34 €

0,44 €

Our Warehouse

2286 pcs

Available for immediate delivery

Info

Additional Datasheet:

RETKAT2012_F_014.pdf Siliconix_ROHS_marking.pdf

Weight:

0.187 g/pcs